top of page

Journal and Conferences

Year 2024

  1. M. Zaid, P. Kumari, M. S. Nazir, A. Pampori, U. Goyal, M. Mishra, and Y. S. Chauhan, "GaN Low Noise Amplifier MMIC with LPF and HPF Noise Matching", Microelectronic Engineering, 2024.

  2. M. Zaid, A. Pampori, M. S. Nazir, and Y. S. Chauhan, "Design and Experimental Validation of Class-F−1 GaN Power Amplifier using a Compact Harmonic Control Unit", Microelectronics Journal, 2024.

  3. M. Zaid, A. Pampori, M. S. Nazir, and Y. S. Chauhan, "GaN-based Wide-Band High-Efficiency Power Amplifier with Multi Harmonic Resonance", Microelectronics Journal, 2024.

  4. M. Zaid, P. Kumari, A. Pampori, M. S. Nazir, U. Goyal, M. Mishra, and Y. S. Chauhan, "Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability," IEEE Access, Vol. 12, pp. 53475-53484, April 2024.

  5. A. Pampori, M. S. Nazir, R. Dangi, M. L. Chou, G. Y. Lee, and Y. S. Chauhan, "A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch with OFF-state Harmonic Control", IEEE Transactions on Electron Devices, Vol. 71, Issue 1, pp. 84-90, January 2024.

  6. M. Rafiq, M. S. Nazir, S. Chatterjee, Y. S. Chauhan, and S. Sahay, "A SPICE-Compatible Model for Ferroelectric GaN HEMTs," 82nd Device Research Conference (DRC), Washington DC, USA, June 2024.

  7. P. Pal, R. Dangi, M. Sajid Nazir, P. Kumari, U. Goyal, S. Kumar, P. Singh, M. Mishra, and Y. S. Chauhan, "Scalable GaN-HEMT Model for X-band RF Applications", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.

  8. M. Zaid, P. Kumari, M. S. Nazir, U. Goyal, M. Mishra, and Y. S. Chauhan, "X-band GaN LNA MMIC Using an Empirical Noise Model", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.

  9. M. S. Nazir, R. Dangi, M. Zaid, A. Pampori and Y. S. Chauhan, "Extension of ASM-HEMT Framework for Cryogenic Temperatures", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.

 

Year 2023

  1. M. S. Nazir, A. Pampori, R. Dangi, S. A. Ahsan, and Y. S. Chauhan, "Charge-based Flicker Noise Modeling of GaN HEMTs down to Cryogenic Temperatures", IEEE Electron Device Letters, Vol. 44, Issue 9, pp. 1416-1419, September 2023.

  2. M. S. Nazir, A. Pampori, Y. Hayat, A. Kar, and Y. S. Chauhan, "Characterization and Modeling of I-V, C-V and Trapping behavior of SiC Power MOSFETs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023.

  3. M. Zaid, A. Pampori, S. Nazir, and Y. S. Chauhan, "High Efficiency and High Linearity GaN Power Amplifier With Harmonic Tuning and Fundamental Matching Networks," IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), Ahmedabad, India, Dec. 2023.

  4. M. S. Nazir, A. Pampori, R. Dangi, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "Characterization and Modeling of Drain Lag using a Modified RC Network in the ASM-HEMT Framework," Solid State Electronics, Vol. 199, pp. 108490, January 2023.

 

Year 2022

  1. M. S. Nazir, P. Kushwaha, A. Pampori, S. A. Ahsan, and Y. S. Chauhan, "Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures", IEEE Transactions on Electron Devices, Vol. 69, Issue 11, November 2022.

  2. M. S. Nazir, A. Pampori, R. Dangi, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "Characterization and Modeling of Drain Lag using a Modified RC Network in the ASM-HEMT Framework", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain, September 2022.

bottom of page